unisonic technologies co., ltd 5n25 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2014 unisonic technologies co., ltd qw-r502-852.b 3.8a, 250v logic n-channel mosfet ? description the utc 5n25 is an n-channel enhancement mosfet, it uses utc?s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. it can also withstand high energy pulse in the avalanche and commutation modes. the utc 5n25 is suitable for high efficiency switching dc/dc converter, motor control and switch mode power supply. ? features * r ds(on) <1.2 ? @v gs =10v * low gate charge ( typ=14nc) * low c rss ( typ=6.0pf) * high switching speed ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 5n25l-tn3-t 5N25G-TN3-T to-252 g d s tube 5n25l-tn3-r 5n25g-tn3-r to-252 g d s tape reel note: pin assignment: g: gate d: drain s: source ? marking information
5n25 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-852.b ? absolute maximum ratings (t c =25c, unless otherwise noted) parameter symbol ratings unit drain-source voltage v dss 250 v gate-source voltage v gss 20 v drain current continuous i d 3.8 a pulsed (note 2) i dm 9 a avalanche current (note 2) i ar 3.8 a avalanche energy single pulsed (note 3) e as 85 mj repetitive (note 2) e ar 3.7 mj peak diode recovery dv/dt (note 4) dv/dt 5.5 v/ns power dissipation t a =25c p d 2.5 w t c =25c 37 w derate above 25c 0.29 w/c junction temperature t j -55~+150 c storage temperature range t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width lim ited by maximum junction temperature. 3. l=6.2mh, i as =3.8a, v dd =50v, r g =25 ? , starting t j =25c. 4. i sd 4.5a, di/dt 300a/s, v dd bv dss , starting t j =25c. ? thermal characteristics parameter symbol ratings unit junction to ambient (note) ja 50 c/w junction to ambient 110 c/w junction to case jc 3.4 c/w note: when mounted on the minimum pad size recommended (pcb mount)
5n25 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-852.b ? electrical characteristics (t c =25c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 250 v breakdown voltage temperature coefficient bv dss /t j reference to 25c, i d =250a 0.18 v/c drain-source leakage current i dss v ds =250v, v gs =0v 1 a gate-source leakage current forward i gss v gs =+20v, v ds =0v +100 na reverse v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 2 4 v static drain-source on-state resistance (note 1) r ds(on) v gs =10v, i d =1.9a 0.74 1.2 ? v gs =5v, i d =1.9a 0.92 1.25 ? forward transconductance g fs v ds =30v, i d =1.9a 3.35 s dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 250 325 pf output capacitance c oss 40 50 pf reverse transfer capacitance c rss 6 8 pf switching parameters total gate charge q g v gs =5v, v ds =160v, i d =4.5a (note 1, 2) 14 20 nc gate to source charge q gs 1.2 nc gate to drain charge q gd 2.4 nc turn-on delay time t d ( on ) v dd =100v, i d =4.5a, r g =25 ? (note 1, 2) 28 40 ns rise time t r 24 80 ns turn-off delay time t d ( off ) 80 110 ns fall-time t f 20 90 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 3.8 a maximum body-diode pulsed current i sm 9 a drain-source diode forward voltage v sd i s =3.8a, v gs =0v 1.5 v body diode reverse recovery time t rr i s =4.5a, v gs =0v, di f /dt=100a/s (note 1) 95 ns body diode reverse recovery charge q rr 0.3 c notes: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature
5n25 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-852.b ? test circuits and waveforms 50k ? 300nf dut v ds 5v 12v charge q gs q gd q g gate charge test circuit gate charge waveforms v gs v gs 200nf same type as dut 3ma
5n25 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-852.b ? test circuits and waveforms(cont.) v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd same type as dut i sd v gs l driver v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current peak diode recovery dv/dt test circuit and waveforms
5n25 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-852.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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